Si doping of high Al content AlGaN
The basic characteristics of the Si-doped Al0.90Ga0.10N epitaxial thin films discussed in this paper are shown in Fig. 1a. The samples were synthesized by metal-organic vapor phase epitaxy (MOVPE) on epitaxially…
The basic characteristics of the Si-doped Al0.90Ga0.10N epitaxial thin films discussed in this paper are shown in Fig. 1a. The samples were synthesized by metal-organic vapor phase epitaxy (MOVPE) on epitaxially…
We evaluated two categories of natural language processing (NLP) tools to classify CTE text reports. The first of these, rationale extraction (RE), is targeted towards high interpretability. The second, language modeling (LM), is targeted towards…
Next, we measure the buildup of self-sustained oscillations as the zero-amplitude state is changed abruptly from stable to unstable. We maintain the amplitude of the pump constant…
Crystallized as a hexagonal structure, group-IV (carbon-group) Xene possesses the simplest 2D structure but plentiful novel physics adjacent to their K(\({K}^{{\prime} }\)) valleys. Distinct from graphene that…
Random number generators are essential in fields such as cryptography, numerical computation, and blockchain technology1. However, conventional pseudorandom number-generators (PRNGs) produce sequences…
The considered loaded transmission line (TL) unit cell is shown in Fig. 1(a). It is a T-shape unit cell with two time-invariant (TI) TLs of length \(0.5m~\lambda _m\), where \(\lambda _m\) is the wavelength of the modulation signal, as series…
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In this section, we employ the pivotal approach to construct prediction intervals for the unknown future lower OMELRRSS values \(z_{\tau :n}\), where \(\tau = s+1, s+2, \ldots , n\). These intervals are based on the observed values \(z_{i:n}\),…
Compared to multi-qubit states, the structure of high-dimensional multi-particle quantum states is more complex. Combining high-dimensionality with many particles can, for instance, be revealed by a notion of dimensionality vector10. The smallest…
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Holechek, J. L., Geli, H. M. E., Sawalhah, M. N. & Valdez, R. A….