GaAs/AlGaAs single heterojunctions with electron density \(n=2.6 \times 10^{11} \,\,{\rm cm}^{-2}\) and mobility \(\mu = 8 \times 10^{6} \,\,{\rm cm}^{-2}/Vs\) were patterned by photolithography into Hall bar type devices, including triple…
Current scaling of the magnetoresistance peaks in the microwave radiation induced magnetoresistance oscillations
