Ambipolar carbon nanotube ferroelectric transistors
Figure 1a schematically illustrates the SWCNT FeFET fabricated in a back-gate FET configuration, which consists of a monolayer film of aligned semiconducting SWCNTs (average diameter: 1.5 nm29)…
Figure 1a schematically illustrates the SWCNT FeFET fabricated in a back-gate FET configuration, which consists of a monolayer film of aligned semiconducting SWCNTs (average diameter: 1.5 nm29)…