Exploiting strained epitaxial germanium for scaling low-noise spin qubits at the micrometre scale

Heterostructure growth

The Ge/SiGe heterostructure material is grown using reduced-pressure chemical vapour deposition in an ASMI Epsilon 2000 reactor. Starting from a Ge wafer, a 2.5 μm strain-relaxed Si_(1–x)Ge_x buffer is grown at a…