Detector description
LGAD sensors are based on an n-in-p silicon junction and incorporate an additional layer, moderately doped with the same polarity as the substrate. This region, typically created via ion implantation and referred to as the…
LGAD sensors are based on an n-in-p silicon junction and incorporate an additional layer, moderately doped with the same polarity as the substrate. This region, typically created via ion implantation and referred to as the…